The global laser diode market value rose by 62% from 2002 to 2013, making it worth $8.33 billion [1]. This is due to rising demand for laser diodes, which is a result of them being environmentally friendly, cost-effective, and easy to use. But in order to satisfy this demand for laser diodes, changes must take place to better enhance the properties of this device. In order to do that this project is aiming to increase the efficiency of Indium Phosphide (InP) self organised quantum dot (QD) laser diodes using barrier doping. Each of the three different samples of the laser diodes with different doping were tested once using the light-current (L-I) test to obtain their optoelectronic properties. They were placed into a cryostat. Using Liquid Nitrogen, the temperature of the laser diode sample was reduced from 340 to 260 K. This results in the L-I characteristic curves for the samples, which were used to determine the threshold current density. The threshold current density of the sample with high barrier doping was 114000 mA/cm2 at 260K, and 143000 mA/cm2 at 300K (room temperature). At 340K, the sample with high barrier doping had a threshold current density of 215000 mA/cm2, about 34% lower than the undoped sample. Barrier doping on InP self organised quantum dot laser diodes show promising results, however more tests will be conducted in the following months to come. As an application QD laser diodes can be used in cars, computers, fibre optics, barcode readers, medical devices and more which ensures the importance of QD laser diodes.
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جائزة خاصة مقدمة من شركة إكسون موبيل
