Laser diode technology is a growing field with an ever-expanding number of applications, including fiber optic communication, surgical instruments, and material processing. While its efficiency has increased since its beginning, there is much room for improvement as it is an expensive technology. This study aims to determine the optimal percentage of Gallium (Ga) in the composition of a laser diode that is made of Gallium Indium Phosphide (GaInP) and Indium Phosphide (InP). Three samples, all created using Metalorganic Vapour-phase Epitaxy (MOVPE) growth and fabricated using the oxide stripe laser method to create a working device, were tested with varying percentages of Ga inside the quantum well layer. Their Current-Voltage (I-V) graphs, threshold current and threshold current density were analyzed at different operating temperatures. We saw enhanced threshold current density and L-I characteristics. This enhances the laser’s efficiency, reducing operating costs and allowing further improvement of human quality of life through its usage in the communication and health fields.
الجوائز التي حاز عليها :
المركز الخامس في الأولمبياد الوطني للإبداع العلمي
جائزة خاصة مقدمة من إكسون موبيل
جائزة خاصة مقدمة من شركة ريكو الأمريكية
